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SEG(Selective Epitaxial Growth)

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FalconTM : Multi-Stack SEG System

The Harrier-M™ is a mini batch ALD system for NAND, DRAM and Logic device which has better ALD performance with small volume, narrow gap & wide boat pitch. The better ALD performance with faster pumping/purge ability can provide increased film quality with precision material engineering, excellent step coverage, minimal pattern loading, lower impurity and best wafer to wafer uniformity with compact “5+1” zone heater.

Key Features
  • Temperature Range: 400~850°C
  • Dual Tube (Inner & Outer Tube)
  • Smaller Volume & Higher Vacuum Conductance
  • Direct Laminar Flow with Narrow Gap & Wide Boat Pitch
  • Compact “5+1” Zone Heater Design
  • Chamber In-situ Cleaning
Benefits
  • Precision Material Engineering with Better ALD Performance
  • Excellent Step Coverage
  • Excellent Within Wafer and Wafer to Wafer Uniformity
  • Minimal Pattern Loading Effect
  • Lower Film Impurity
  • Well-proven Safety for High Temperature Process
  • High Throughput with Improved UPS
Applications
LSI NAND DRAM
- PMOS TiN
- Low-k Spacer : SiOCN
- ALD SiO & SiN
- 3Charge Trap Nitride
- 3Tunnel Oxide
- 3IPD ONO
- 3High Quality 3D Gap-fill SiO/SiN
- 3Gate BM TiN/TSN
- Low-k Spacer : SiOCN
- Top/BTM Electrode TiN